onsemi · FETs & Power MOSFETs · MPN FDT86106LZ
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 3.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.1pF |
| RDS(on) | 80mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 315pF |
100V 3.2A 2.2V 2.2W 80mΩ@10V 1 N-channel SOT-223-4 Single FETs, MOSFETs RoHS