onsemi · FETs & Power MOSFETs · MPN FDT4N50NZU
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| Gate Charge(Qg) | 9.1nC@10V |
|---|---|
| Drain to Source Voltage | 500V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5.5V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 3Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 476pF |
| Type | N-Channel |
500V 2A 5.5V 2W 3Ω@10V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs RoHS