onsemi FDT459N

onsemi · FETs & Power MOSFETs · MPN FDT459N

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)17nC@10V
Output Capacitance(Coss)210pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation20W
Reverse Transfer Capacitance (Crss@Vds)70pF
RDS(on)55mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)365pF
TypeN-Channel

Technical details

30V 6.5A 2V 20W 55mΩ@4.5V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs RoHS

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