onsemi · FETs & Power MOSFETs · MPN FDT458P
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| Gate Charge(Qg) | 3.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 55pF |
| Current - Continuous Drain(Id) | 3.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 10W |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF |
| RDS(on) | 200mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 205pF |
| Type | P-Channel |
30V 3.4A 1.8V 10W 200mΩ@4.5V 1 P-Channel P-Channel SOT-223 Single FETs, MOSFETs RoHS