onsemi · FETs & Power MOSFETs · MPN FDT457N
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| Gate Charge(Qg) | 4.2nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 43mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 235pF |
N-Channel 30V 5A 3W Surface Mount SOT-223