onsemi FDT439N

onsemi · FETs & Power MOSFETs · MPN FDT439N

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Specifications

Gate Charge(Qg)15nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)6.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))670mV
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)43pF
RDS(on)45mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)500pF

Technical details

N-Channel 30V 6.3A 3W Surface Mount SOT-223

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