onsemi · FETs & Power MOSFETs · MPN FDT1600N10ALZ
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| Gate Charge(Qg) | 2.9nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 43pF |
| Current - Continuous Drain(Id) | 5.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 10.42W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.04pF |
| RDS(on) | 121mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 169pF |
| Vgs | ±20V |
N-Channel 100V 5.6A 10.42W Surface Mount SOT-223