onsemi FDS9958

onsemi · FETs & Power MOSFETs · MPN FDS9958

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Specifications

Current - Continuous Drain(Id)2.9A
RDS(on)105mΩ@10V
Pd - Power Dissipation1.6W
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)65pF
Number2 P-Channel
Input Capacitance(Ciss)1.02nF
Gate Charge(Qg)23nC@10V
Operating Temperature-55℃~+150℃

Technical details

2.9A 105mΩ@10V 1.6W 2 P-Channel SOP-8 FET, MOSFET Arrays RoHS

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