onsemi FDS8978

onsemi · FETs & Power MOSFETs · MPN FDS8978

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)26nC@10V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)112pF
RDS(on)18mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.27nF
TypeN-Channel

Technical details

N-Channel Array 30V 7.5A 1.6W Surface Mount SOIC-8

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