onsemi · FETs & Power MOSFETs · MPN FDS8962C
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 26nC@10V |
| Output Capacitance(Coss) | 528pF |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 30mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 575pF |
| Type | N-Channel + P-Channel |
30V 7A 3V 2W 30mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SOIC-8 Single FETs, MOSFETs RoHS