onsemi · FETs & Power MOSFETs · MPN FDS8958B
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 155pF |
| Current - Continuous Drain(Id) | 6.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 26mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 540pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 6.4A 2W Surface Mount SO-8