onsemi FDS8949

onsemi · FETs & Power MOSFETs · MPN FDS8949

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Specifications

Current - Continuous Drain(Id)9A
Pd - Power Dissipation2W
RDS(on)36mΩ@4.5V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)955pF
Gate Charge(Qg)11nC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

N-Channel Array 40V 9A 2W Surface Mount SO-8

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