onsemi FDS8926A

onsemi · FETs & Power MOSFETs · MPN FDS8926A

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)28nC@4.5V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.6W
Reverse Transfer Capacitance (Crss@Vds)110pF
RDS(on)38mΩ@2.5V
Number2 N-Channel
Input Capacitance(Ciss)900pF
TypeN-Channel

Technical details

30V 5.5A 1V 1.6W 38mΩ@2.5V 2 N-Channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

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