onsemi · FETs & Power MOSFETs · MPN FDS89161LZ
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| Current - Continuous Drain(Id) | 2.7A |
|---|---|
| RDS(on) | 105mΩ@10V |
| Pd - Power Dissipation | 1.6W |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 302pF |
| Gate Charge(Qg) | 5.3nC@10V |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 100V 2.7A 1.6W Surface Mount SO-8