onsemi · FETs & Power MOSFETs · MPN FDS89161
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| Current - Continuous Drain(Id) | 2.7A |
|---|---|
| RDS(on) | 105mΩ@10V |
| Pd - Power Dissipation | 1.6W |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 100V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 210pF |
| Gate Charge(Qg) | 4.1nC@10V |
| Operating Temperature | -55℃~+150℃ |
2.7A 105mΩ@10V 1.6W 4V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS