onsemi FDS89141

onsemi · FETs & Power MOSFETs · MPN FDS89141

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Specifications

Current - Continuous Drain(Id)3.5A
RDS(on)47mΩ@10V
Pd - Power Dissipation31W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage100V
Reverse Transfer Capacitance (Crss@Vds)4.7pF
Number2 N-Channel
Input Capacitance(Ciss)398pF
Gate Charge(Qg)7.1nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 100V 3.5A 31W Surface Mount SO-8

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