onsemi FDS8884

onsemi · FETs & Power MOSFETs · MPN FDS8884

No reviews yet — be the first to review onsemi FDS8884.

Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)135pF
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)30mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)635pF
TypeN-Channel

Technical details

N-Channel 30V 8.5A 2.5W Surface Mount SO-8

Related FETs & Power MOSFETs