onsemi FDS8858CZ

onsemi · FETs & Power MOSFETs · MPN FDS8858CZ

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Specifications

Current - Continuous Drain(Id)8.6A
Pd - Power Dissipation2W
RDS(on)20.5mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)390pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)2.23nF
Gate Charge(Qg)46nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)390pF

Technical details

N-Channel+P-Channel Array 30V 8.6A 2W Surface Mount SO-8

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