onsemi FDS8842NZ

onsemi · FETs & Power MOSFETs · MPN FDS8842NZ

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Specifications

Gate Charge(Qg)73nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)14.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)330pF
RDS(on)7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.845nF

Technical details

N-Channel 40V 14.9A 2.5W Surface Mount SO-8

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