onsemi · FETs & Power MOSFETs · MPN FDS8840NZ
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| Gate Charge(Qg) | 144nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 18.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.535nF |
40V 18.6A 3V 2.5W 4.5mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS