onsemi · FETs & Power MOSFETs · MPN FDS86267P
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 54pF |
| Current - Continuous Drain(Id) | 2.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.6pF |
| RDS(on) | 255mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.13nF |
| Vgs | ±25V |
P-Channel 150V 2.2A 2.5W Surface Mount SO-8