onsemi · FETs & Power MOSFETs · MPN FDS86140
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| Gate Charge(Qg) | 41nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 11.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.7V |
| Pd - Power Dissipation | 2.5W;5W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 9.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.58nF |
100V 11.2A 2.7V 9.8mΩ@10V 1 N-channel SO-8 Single FETs, MOSFETs RoHS