onsemi · FETs & Power MOSFETs · MPN FDS7779Z
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 98nC@10V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| RDS(on) | 11.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.8nF |
| Type | P-Channel |
30V 16A 3V 2.5W 11.5mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS