onsemi FDS7766S

onsemi · FETs & Power MOSFETs · MPN FDS7766S

No reviews yet — be the first to review onsemi FDS7766S.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)58nC@5V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)290pF
RDS(on)6.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.785nF
TypeN-Channel

Technical details

30V 17A 3V 2.5W 6.5mΩ@4.5V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs