onsemi FDS6994S

onsemi · FETs & Power MOSFETs · MPN FDS6994S

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Specifications

Current - Continuous Drain(Id)8.2A
Pd - Power Dissipation2W
RDS(on)21mΩ@10V
Gate Threshold Voltage (Vgs(th))3V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)210pF
Number2 N-Channel
Input Capacitance(Ciss)2.815nF
Gate Charge(Qg)35nC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)540pF

Technical details

8.2A 2W 21mΩ@10V 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS

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