onsemi · FETs & Power MOSFETs · MPN FDS6990S
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| Current - Continuous Drain(Id) | 7.5A |
|---|---|
| Pd - Power Dissipation | - |
| RDS(on) | 22mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 106pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.233nF |
| Gate Charge(Qg) | 16nC@10V |
| Operating Temperature | - |
7.5A 22mΩ@10V 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS