onsemi · FETs & Power MOSFETs · MPN FDS6990AS
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| Configuration | Common source |
|---|---|
| Gate Charge(Qg) | 10nC@10V |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 28mΩ@4.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 550pF |
30V 7.5A 1.7V 2W 28mΩ@4.5V 2 N-Channel SOIC-8 Single FETs, MOSFETs RoHS