onsemi · FETs & Power MOSFETs · MPN FDS6990A
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| Gate Charge(Qg) | 17nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 900mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 18mΩ@10V |
| Number | - |
| Input Capacitance(Ciss) | 1.235nF |
30V 7.5A 3V 900mW 18mΩ@10V SO-8 Single FETs, MOSFETs RoHS