onsemi FDS6975

onsemi · FETs & Power MOSFETs · MPN FDS6975

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Specifications

Current - Continuous Drain(Id)6A
RDS(on)32mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))1.7V
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)170pF
Number2 P-Channel
Input Capacitance(Ciss)1.54nF
Gate Charge(Qg)14.5nC@10V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 6A 2W Surface Mount SO-8

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