onsemi · FETs & Power MOSFETs · MPN FDS6912A
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| Current - Continuous Drain(Id) | 6A |
|---|---|
| RDS(on) | 28mΩ@10V |
| Pd - Power Dissipation | 1.6W |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 575pF |
| Gate Charge(Qg) | 8.1nC |
| Operating Temperature | -55℃~+150℃ |
N-Channel Array 30V 6A 1.6W Surface Mount SO-8