onsemi · FETs & Power MOSFETs · MPN FDS6912
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| Current - Continuous Drain(Id) | 6A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 42mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 740pF |
| Gate Charge(Qg) | 10nC@5V |
| Operating Temperature | -55℃~+150℃ |
6A 2W 42mΩ@4.5V 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS