onsemi · FETs & Power MOSFETs · MPN FDS6910
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 7.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 13mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.13nF |
30V 7.5A 13mΩ@10V 2 N-Channel SO-8 Single FETs, MOSFETs RoHS