onsemi FDS6910

onsemi · FETs & Power MOSFETs · MPN FDS6910

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Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)13mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.13nF

Technical details

30V 7.5A 13mΩ@10V 2 N-Channel SO-8 Single FETs, MOSFETs RoHS

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