onsemi · FETs & Power MOSFETs · MPN FDS6900S
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| Current - Continuous Drain(Id) | 8.2A |
|---|---|
| Pd - Power Dissipation | 2W |
| RDS(on) | 37mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.238nF |
| Gate Charge(Qg) | 17nC@5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 351pF |
8.2A 2W 37mΩ@4.5V 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS