onsemi · FETs & Power MOSFETs · MPN FDS6900AS
No reviews yet — be the first to review onsemi FDS6900AS.
| Current - Continuous Drain(Id) | 6.9A;8.2A |
|---|---|
| RDS(on) | 27mΩ@10V |
| Pd - Power Dissipation | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | - |
| Gate Charge(Qg) | 15nC@10V |
| Operating Temperature | -55℃~+150℃ |
27mΩ@10V 3V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS