onsemi · FETs & Power MOSFETs · MPN FDS6898AZ
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| Current - Continuous Drain(Id) | 9.4A |
|---|---|
| RDS(on) | 18mΩ@2.5V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.821nF |
| Gate Charge(Qg) | 23nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 440pF |
9.4A 18mΩ@2.5V 2W 1.5V 2 N-Channel SOIC-8 FET, MOSFET Arrays RoHS