onsemi FDS6898A

onsemi · FETs & Power MOSFETs · MPN FDS6898A

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Specifications

Current - Continuous Drain(Id)9.4A
Pd - Power Dissipation2W
RDS(on)14mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)208pF
Number2 N-Channel
Input Capacitance(Ciss)1.821nF
Gate Charge(Qg)16nC
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 9.4A 2W Surface Mount SO-8

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