onsemi · FETs & Power MOSFETs · MPN FDS6875
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 400mV |
| Pd - Power Dissipation | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 30mΩ@4.5V |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 2.25nF |
P-Channel 20V 6A 1.6W Surface Mount SO-8