onsemi · FETs & Power MOSFETs · MPN FDS6812A
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 19nC@4.5V |
| Current - Continuous Drain(Id) | 6.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 35mΩ@2.5V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.082nF |
| Type | N-Channel |
20V 6.7A 1.5V 2W 35mΩ@2.5V 2 N-Channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS