onsemi · FETs & Power MOSFETs · MPN FDS6690
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 18nC |
| Output Capacitance(Coss) | 340pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF |
| RDS(on) | 13.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.34nF |
| Type | N-Channel |
30V 10A 3V 2.5W 13.5mΩ@10V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS