onsemi FDS6682

onsemi · FETs & Power MOSFETs · MPN FDS6682

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)582pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)237pF
RDS(on)9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.31nF
TypeN-Channel

Technical details

N-Channel 30V 14A 50W Surface Mount SO-8

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