onsemi · FETs & Power MOSFETs · MPN FDS6681Z
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 260nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.12nF |
| RDS(on) | 6.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 7.54nF |
| Type | P-Channel |
P-Channel 30V 20A 2.5W Surface Mount SO-8