onsemi FDS6679Z

onsemi · FETs & Power MOSFETs · MPN FDS6679Z

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)100nC@10V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)498pF
RDS(on)13mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)3.939nF
TypeP-Channel

Technical details

30V 13A 1.6V 50W 13mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS

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