onsemi · FETs & Power MOSFETs · MPN FDS6679
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| Gate Charge(Qg) | 100nC@15V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 498pF |
| RDS(on) | - |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.939nF |
30V 13A 1.6V 2.5W 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS