onsemi · FETs & Power MOSFETs · MPN FDS6676AS-G
No reviews yet — be the first to review onsemi FDS6676AS-G.
| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 14.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.51nF |
30V 14.5A 3V 1W 6mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS