onsemi FDS6676AS

onsemi · FETs & Power MOSFETs · MPN FDS6676AS

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Specifications

Configuration-
Gate Charge(Qg)63nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)710pF
Current - Continuous Drain(Id)14.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)270pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.51nF

Technical details

N-Channel 30V 14.5A 50W Surface Mount SO-8

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