onsemi · FETs & Power MOSFETs · MPN FDS6675A
No reviews yet — be the first to review onsemi FDS6675A.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 34nC@10V |
| Output Capacitance(Coss) | 610pF |
| Current - Continuous Drain(Id) | 25A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 300pF |
| RDS(on) | 19mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.33nF |
| Type | P-Channel |
30V 25A 3V 2.5W 19mΩ@4.5V 1 P-Channel P-Channel SOIC-8 Single FETs, MOSFETs RoHS