onsemi · FETs & Power MOSFETs · MPN FDS6673BZ-G
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| Gate Charge(Qg) | 65nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 14.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 1W |
| RDS(on) | 7.8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.7nF |
30V 14.5A 3V 1W 7.8mΩ@10V 1 P-Channel SOIC-8 Single FETs, MOSFETs RoHS