onsemi · FETs & Power MOSFETs · MPN FDS6673BZ
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| Gate Charge(Qg) | 124nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 14.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 7.8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.7nF |
P-Channel 30V 14.5A 2.5W Surface Mount SO-8