onsemi FDS6670AS

onsemi · FETs & Power MOSFETs · MPN FDS6670AS

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Specifications

Drain to Source Voltage30V
Current - Continuous Drain(Id)13.5A
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
RDS(on)9mΩ@10V
Number1 N-channel

Technical details

30V 13.5A 3V 2.5W 9mΩ@10V 1 N-channel SOIC-8 Single FETs, MOSFETs RoHS

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