onsemi · FETs & Power MOSFETs · MPN FDS6670A
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| Gate Charge(Qg) | 30nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 535pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 10mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.22nF |
| Type | N-Channel |
N-Channel 30V 20A 2.5W Surface Mount SO-8