onsemi FDS6670A

onsemi · FETs & Power MOSFETs · MPN FDS6670A

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Specifications

Gate Charge(Qg)30nC@5V
Drain to Source Voltage30V
Output Capacitance(Coss)535pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)10mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.22nF
TypeN-Channel

Technical details

N-Channel 30V 20A 2.5W Surface Mount SO-8

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